Title :
A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices
Author :
Khandelwal, Sourabh ; Goyal, Nitin ; Fjeldly, T.A.
Author_Institution :
Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
In this brief, we present a physics-based analytical model for 2-D electron gas density ns in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level Ef and ns. The model is developed by considering the variation of Ef, the first subband E0, the second subband E1, and ns with applied gate voltage Vg. The proposed model is in very good agreement with numerical calculations.
Keywords :
III-V semiconductors; aluminium compounds; discharges (electric); gallium compounds; high electron mobility transistors; numerical analysis; wide band gap semiconductors; 2D electron gas charge density; 2DEG charge density; AlGaN-GaN; HEMT devices; high-electron mobility transistors; numerical calculations; physics-based analytical model; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Logic gates; Mathematical model; Numerical models; AlGaN/GaN high-electron mobility transistor (HEMT); analytical models; two-dimensional electron gas (2DEG) charge density;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2161314
