Physical Origins of Threshold Voltage Variation Enhancement in Si(110) n/pMOSFETs

Author

Saitoh, Masumi ; Yasutake, Nobuaki ; Nakabayashi, Yukio ; Uchida, Ken ; Numata, Toshinori

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

Volume

57

Issue

10

fYear

2010

Firstpage

2493

Lastpage

2498

Abstract

Threshold voltage V_th variations in scaled (110) n/pMOSFETs are systematically investigated. V_th variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of V_th variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance V_th variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance V_th variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize V_th variations in (110) nMOSFETs and pMOSFETs, respectively.

Keywords

MOSFET; arsenic; boron; elemental semiconductors; interface states; silicon; S-factor variations; Si(110) n-MOSFET; Si(110) pMOSFET; Si:As; Si:B; body effect; boron ion channeling; interface fixed charge variations; interface trap density variations; substrate impurity concentration dependence; threshold voltage variation enhancement; Boron; Dielectric measurements; Doping; Doping profiles; Electron mobility; Fluctuations; Impurities; Logic gates; MOSFETs; Research and development; Resource description framework; Substrates; Technological innovation; Threshold voltage; (110); Channeling; MOSFETs; depletion width; fixed charge; interface trap; threshold voltage; variations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2059592

Filename

5549882