• DocumentCode
    1296392
  • Title

    The frequency response of a fractal photolithographic structure

  • Author

    Haba, T. Cisse ; Ablart, G. ; Camps, T.

  • Author_Institution
    Univ. Paul Sabatier, Toulouse, France
  • Volume
    4
  • Issue
    3
  • fYear
    1997
  • fDate
    6/1/1997 12:00:00 AM
  • Firstpage
    321
  • Lastpage
    326
  • Abstract
    The interest in fractal materials structure in recent years paved the way for the study of the electrical behavior of metallic samples having `fractal tree´ patterns. The unique characteristics of these structures, such as the self-similarity and the fractional dimension D f, endow these materials with specific physical properties. The simulations and the measurements performed give evidence for the impedance of such a structure, a frequency response closely correlated with the sample structure itself and the so-called constant phase angle behavior of its phase. Indeed, during the characterization of the fractal sample in frequency, it is found that the real and the imaginary parts of the impedance obey the same law of variation beyond a certain frequency. This factor leads us to the relation (Ze)/(Ze )=tan (θ)=constant
  • Keywords
    MIS devices; MIS structures; electric impedance; fractals; frequency response; photolithography; 20 Hz to 1 MHz; MOS technology; Si-SiO2; constant phase angle behavior; fractal photolithographic structure; fractal tree patterns; fractional dimension; frequency response; metallic samples; self-similarity; Conducting materials; Dielectric materials; Fractals; Frequency response; Impedance measurement; Inorganic materials; MOS devices; Performance evaluation; Phase measurement; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/94.598289
  • Filename
    598289