Title :
Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates
Author :
Huang, Huei-Min ; Lu, Tien-Chang ; Chang, Chiao-Yun ; Ling, Shih-Chun ; Chan, Wei-Wen ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 × 10-2 to 2.58 × 10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light polarisation; nanofabrication; nanophotonics; nanorods; optical fabrication; optical materials; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; stress relaxation; voids (solid); wide band gap semiconductors; GaN; InGaN-GaN; emission polarization; in-plane strain; microsize air-voids; nanorod epitaxially lateral overgrowth templates; optical fabrication; strain relaxation; Epitaxial growth; Gallium nitride; Quantum well devices; Strain; Vertical cavity surface emitting lasers; InGaN–GaN MQWs; a-plane; polarization; strain;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2011.2164896
