Title :
2 dB noise figure, 10.5 GHz LNA using SiGe bipolar technology
Author :
Zoschg, D. ; Wilhelm, W. ; Meister, T.F. ; Knapp, H. ; Wohlmuth, H.D. ; Aufinger, K. ; Wurzer, M. ; Bock, J. ; Schafer, H. ; Scholtz, A.
Author_Institution :
Inst. fur Nachrichtentech. und Hochfrequenztech., Tech. Univ. Wien, Austria
fDate :
12/9/1999 12:00:00 AM
Abstract :
A monolithically integrated low-noise amplifier (LNA) in 0.5 μm, 80 GHz Si/SiGe bipolar technology is presented. Measurement at 10.5 GHz gives a 50 n noise figure of 2.0 dB with a gain of 26 dB. This record noise performance for Si/SiGe LNAs is obtained by careful noise matching of the input stage optimised for the frequency band and technological parameters
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar analogue integrated circuits; integrated circuit noise; semiconductor materials; 0.5 micron; 10.5 GHz; 2 dB; 26 dB; SiGe; SiGe bipolar technology; gain; low-noise amplifier; monolithic integration; noise figure; noise matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991498
