• DocumentCode
    1296758
  • Title

    Low-voltage fully differential switched current memory cell

  • Author

    Balachandran, G.K. ; Allen, P.E.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    35
  • Issue
    25
  • fYear
    1999
  • fDate
    12/9/1999 12:00:00 AM
  • Firstpage
    2200
  • Lastpage
    2201
  • Abstract
    A fully differential switched-current (SI) memory cell with a new common-mode feedback technique is presented. The cell achieves a lower voltage of operation (Vdd,min=Vt+3Vds,sat ) than that (Vdd,min=2Vt+4Vds,sat) of its conventional counterpart, by using a new common-mode current sensing technique
  • Keywords
    circuit feedback; integrated memory circuits; low-power electronics; switched current circuits; common-mode feedback; current sensing; low-voltage fully differential switched current memory cell;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991490
  • Filename
    820298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1296758