Title :
1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
Author :
Borchert, B. ; Egorov, A.Yu. ; Illek, S. ; Komainda, M. ; Riechert, H.
Author_Institution :
Corp. Res. Photonics, Infineon Technols., Munich, Germany
fDate :
12/9/1999 12:00:00 AM
Abstract :
The authors report an MBE-grown GaInNAs MQW ridge-waveguide (RWG) emitting at 1.29 μm with performance data that for the first time rival those of InGaAsP lasers. Among these data are threshold currents of 21 mA, slope efficiencies of 0.25 W/A per facet and values of up to 110 K for the characteristic temperature T0. These important improvements in material quality should pave the way towards monolithically-grown 1.30 μm GaInNAs VCSELs in the near future
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.29 mum; 110 K; 21 mA; GaInNAs; GaInNAs MQW ridge-waveguide; GaInNAs VCSELs; GaInNAs multiple quantum-well ridge-waveguide laser diodes; InGaAsP lasers; MBE-grown; characteristic temperature; material quality; monolithically-grown; performance data; slope efficiencies; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991513
