1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

Author

Borchert, B. ; Egorov, A.Yu. ; Illek, S. ; Komainda, M. ; Riechert, H.

Author_Institution

Corp. Res. Photonics, Infineon Technols., Munich, Germany

Volume

35

Issue

25

fYear

1999

fDate

12/9/1999 12:00:00 AM

Firstpage

2204

Lastpage

2206

Abstract

The authors report an MBE-grown GaInNAs MQW ridge-waveguide (RWG) emitting at 1.29 μm with performance data that for the first time rival those of InGaAsP lasers. Among these data are threshold currents of 21 mA, slope efficiencies of 0.25 W/A per facet and values of up to 110 K for the characteristic temperature T₀. These important improvements in material quality should pave the way towards monolithically-grown 1.30 μm GaInNAs VCSELs in the near future

Keywords

Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.29 mum; 110 K; 21 mA; GaInNAs; GaInNAs MQW ridge-waveguide; GaInNAs VCSELs; GaInNAs multiple quantum-well ridge-waveguide laser diodes; InGaAsP lasers; MBE-grown; characteristic temperature; material quality; monolithically-grown; performance data; slope efficiencies; threshold currents;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19991513

Filename

820301