DocumentCode :
1296894
Title :
Electrical stress damage reversal in nonpassivated fully self-aligned InP HBTs by ozone surface treatment
Author :
Matine, N. ; Soerensen, G. ; Bolognesi, C.R. ; DiSanto, D. ; Xu, X. ; Watkins, S.P.
Author_Institution :
CSDL, Simon Fraser Univ., Burnaby, BC, Canada
Volume :
35
Issue :
25
fYear :
1999
fDate :
12/9/1999 12:00:00 AM
Firstpage :
2229
Lastpage :
2231
Abstract :
The authors report that the degradation of device characteristics due to electrical stressing in non-passivated fully self-aligned InP based heterostructure bipolar transistors (HBTs) can be reversed by a simple surface treatment in ozone. The technique is demonstrated on MOCVD-grown InP/GaAs0.51Sb0.49/InP double heterostructure bipolar transistors (DHBTs) with a C-doped base. and on conventional MBE-grown InP/Ga0.47In0.53As single heterostructure bipolar transistors (SHBTs) with a Be-doped base. This is the first report of the reversibility of bias stress damage in the extrinsic region of III-V HBTs: the experiments presented confirm that stress damage occurs at the exposed emitter periphery. Thus explaining the success of emitter ledge passivation techniques
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; passivation; surface treatment; Be-doped base; InP; InP/Ga0.47In0.53As; InP/GaAs0.51Sb0.49/InP; MBE-grown; MOCVD-grown; O3; double heterostructure bipolar transistors; electrical stress damage reversal; emitter ledge passivation techniques; heterostructure bipolar transistors; nonpassivated fully self-aligned InP; ozone surface treatment; reversibility; single heterostructure bipolar transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991467
Filename :
820317
Link To Document :
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