Title :
Formation of local p+ region in ZnSe by Cu3Ge contact
Author :
Chang, S.J. ; Chen, W.R. ; Su, Y.K. ; Chen, J.F. ; Lan, W.H. ; Lin, A.C.H. ; Chang, H.
Author_Institution :
Dept. of Electr. Eng., Cheng Kung Univ., Tainan, Taiwan
fDate :
12/9/1999 12:00:00 AM
Abstract :
Cu3Ge/Pt/Au has been deposited onto the surface of p-ZnSe, n+-ZnSe and n-ZnSe. It was found that the observed Cu 3Ge/p-ZnSe ohmic behaviour is due mainly to hole tunnelling through the metal/semiconductor interface. A p+-n junction-like I-V characteristic for Cu3Ge/n-ZnSe was also observed. Furthermore, a negative differential resistance with a peak-to-valley ratio of ~6 was observed under forward bias when Cu3 Ge was deposited onto n+-ZnSe. These observations all suggest that Cu3Ge can form a local p+ region on the ZnSe surface
Keywords :
II-VI semiconductors; copper alloys; germanium alloys; ohmic contacts; p-n heterojunctions; semiconductor-metal boundaries; zinc compounds; Cu3Ge contact; Cu3Ge/Pt/Au; ZnSe; ZnSe-Cu3Ge-Pt-Au; hole tunnelling; local p+ region; metal/semiconductor interface; negative differential resistance; ohmic behaviour; p+-n junction-like I-V characteristic; peak-to-valley ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991480
