Title :
Fast direct e-beam lithographic fabrication of first-order gratings for 1.3 μm DFB lasers
Author :
Gozdz, A.S. ; Lin, P.S.D. ; Scherer, A. ; Lee, S.F.
Author_Institution :
Bell Commun. Res., Red Bank, NJ, USA
fDate :
1/21/1988 12:00:00 AM
Abstract :
Phase-shifted first-order gratings for 1.3 μm distributed-feedback (DFB) lasers have been fabricated in InP by fast direct e-beam lithography. The two-layer resist system consisted of a highly sensitive (~3 μC/cm2) positive organosilicon e-beam resist, poly(3-butenyltrimethylsilane sulfone) (PBTMSS), and a bottom layer of diamond-like carbon (DLC). The high quality of these gratings was reflected in the excellent characteristics of the DFB lasers
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; electron resists; indium compounds; semiconductor junction lasers; 1.3 micron; DFB lasers; DLC; InP; PBTMSS; diamond like C films; diamond-like carbon; diffraction gratings; fast direct e-beam lithography; phase shifted first order gratings; poly(3-butenyltrimethylsilane sulfone); positive organosilicon e-beam resist; sensitivity 3 μC/cm2; two-layer resist system;
Journal_Title :
Electronics Letters
