Power level controlled optical sweep oscillator using a GaAs semiconductor laser

Author

Yamaguchi, Shizuo ; Suzuki, Masao

Author_Institution

Dept. of Electr. Eng., Tokyo Inst. of Polytech., Kanagawa, Japan

Issue

3

fYear

1987

Firstpage

789

Lastpage

796

Abstract

A frequency-tunable semiconductor laser having a power level controller has been developed. The laser frequency is locked to a piezoelectrically modulated interferometer having a free spectral range of 5 GHz and tuned by varying its mirror gap. A servoloop for this purpose is connected to the injection current source of the laser diode. The level of the output power is stabilized by a second servoloop connected to the temperature controller of the laser diode. The relations between the parameters of the servoloops and the characteristic of the laser diode to get a good system response are discussed.

Keywords

III-V semiconductors; gallium arsenide; laser frequency stability; laser mode locking; oscillators; power control; semiconductor junction lasers; servomechanisms; temperature control; 5 GHz; GaAs; free spectral range; frequency-tunable semiconductor laser; optical sweep oscillator; output power; piezoelectrically modulated interferometer; power level controller; servoloop; servomechanism; temperature controller; Frequency modulation; Laser stability; Laser tuning; Measurement by laser beam; Power generation; Power lasers;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.1987.6312790

Filename

6312790