Title : 
Power level controlled optical sweep oscillator using a GaAs semiconductor laser
         
        
            Author : 
Yamaguchi, Shizuo ; Suzuki, Masao
         
        
            Author_Institution : 
Dept. of Electr. Eng., Tokyo Inst. of Polytech., Kanagawa, Japan
         
        
        
        
        
        
            Abstract : 
A frequency-tunable semiconductor laser having a power level controller has been developed. The laser frequency is locked to a piezoelectrically modulated interferometer having a free spectral range of 5 GHz and tuned by varying its mirror gap. A servoloop for this purpose is connected to the injection current source of the laser diode. The level of the output power is stabilized by a second servoloop connected to the temperature controller of the laser diode. The relations between the parameters of the servoloops and the characteristic of the laser diode to get a good system response are discussed.
         
        
            Keywords : 
III-V semiconductors; gallium arsenide; laser frequency stability; laser mode locking; oscillators; power control; semiconductor junction lasers; servomechanisms; temperature control; 5 GHz; GaAs; free spectral range; frequency-tunable semiconductor laser; optical sweep oscillator; output power; piezoelectrically modulated interferometer; power level controller; servoloop; servomechanism; temperature controller; Frequency modulation; Laser stability; Laser tuning; Measurement by laser beam; Power generation; Power lasers;
         
        
        
            Journal_Title : 
Instrumentation and Measurement, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TIM.1987.6312790