Title :
Current-handling and switching performance of MOS-controlled thyristor (MCT) structures
Author :
Bauer, F. ; Hollenbeck, H. ; Stockmeier, T. ; Fichtner, Wolfgang
Author_Institution :
ABB Corp. Res. Center, Baden, Switzerland
fDate :
6/1/1991 12:00:00 AM
Abstract :
Experimental results are reported for array-type MCT devices fabricated using a BiMOS process with additional power-specific fabrication steps. Stationary measurements of both the thyristor forward behavior and the intrinsic p-channel MOSFET switch characteristics are an indication of the device quality. Through dynamic testing procedures, the device was analyzed in its transient current handling. The combination of anode current and blocking voltage values is the highest ever reported on MCT devices (2 kV, 5 A, in 2 mu s).<>
Keywords :
metal-insulator-semiconductor devices; thyristors; 2 kV; 2 mus; 5 A; BiMOS process; MCT; MOS-controlled thyristor; MOSFET switch characteristics; anode current; array-type MCT devices; blocking voltage; current handling performance; dynamic testing procedures; power-specific fabrication steps; static measurements; switching performance; thyristor forward behavior; transient current handling; Anodes; Cathodes; Helium; Insulated gate bipolar transistors; MOSFET circuits; Modems; Switches; Termination of employment; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
