Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

Author

Sturm, J.C. ; Prinz, E.J. ; Magee, C.W.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

303

Lastpage

305

Abstract

Graded-base and uniform-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition. The temperature dependences of the collector currents are shown to obey a simple analytical model of an effective Gummel number. The model can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11000 have been observed at 133 K.<>

Keywords

Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; semiconductor device models; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; semiconductor materials; vapour phase epitaxial growth; 133 K; RTCVD; Si-Si/sub 1-x/Ge/sub x/-Si; arbitrary base profiles; base currents; collector currents; current gains; effective Gummel number; graded base HBTs; heterojunction bipolar transistors; model; narrow bandgap base; near-ideal electrical characteristics; rapid thermal CVD; rapid thermal chemical vapor deposition; temperature dependences; uniform base HBTs; Channel hot electron injection; Chemical vapor deposition; Electric variables; Fabrication; Heterojunction bipolar transistors; Inductors; Infrared heating; Molecular beam epitaxial growth; Out of order; Temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82068

Filename

82068