• DocumentCode
    1297304
  • Title

    Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology

  • Author

    Artola, Laurent ; Hubert, G. ; Duzellier, S. ; Bezerra, Francoise

  • Author_Institution
    ONERA, Toulouse, France
  • Volume
    57
  • Issue
    4
  • fYear
    2010
  • Firstpage
    1869
  • Lastpage
    1875
  • Abstract
    TCAD simulations of a 90 nm CMOS bulk technology have been performed to investigate how technologies parameters impact on the collection charge leading to Single Event Effects. This work proposes an improved diffusion collection model.
  • Keywords
    CMOS integrated circuits; circuit simulation; ion beam effects; technology CAD (electronics); CMOS bulk technology; TCAD simulation; collected charge analysis; diffusion collection model; new transient model; single event effects; Aerospace electronics; Analytical models; Charge carrier density; Discrete event simulation; Doping; Doping profiles; Junctions; Neutrons; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Space technology; Substrates; Transient analysis; Charge collection; TCAD simulation; diffusion analytical model; heavy ion; single event effect;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2053944
  • Filename
    5550362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1297304