Simulated Effects of Proton and Ion Beam Irradiation on Titanium Dioxide Memristors

Author

Vujisic, Milos ; Stankovic, Koviljka ; Marjanovic, Nada ; Osmokrovic, Predrag

Author_Institution

Fac. of Electr. Eng., Univ. of Belgrade, Belgrade, Serbia

Volume

57

Issue

4

fYear

2010

Firstpage

1798

Lastpage

1804

Abstract

Effects of titanium dioxide memristor exposure to proton and ion beams are investigated. A memristor model assuming ohmic electronic conduction and linear ionic drift is used for the analysis. Simulations of particle transport suggest that radiation induced oxygen ion/oxygen vacancy pairs can influence the device´s operation by lowering both the mobility of the vacancies and the resistance of the stoichiometric oxide region. These radiation induced changes affect the current-voltage characteristic and state retention ability of the memristor.

Keywords

Monte Carlo methods; memristors; proton effects; simulation; stoichiometry; titanium compounds; Monte Carlo method; ion beam irradiation; linear ionic drift; ohmic electronic conduction; oxygen vacancy pairs; particle transport; proton simulated effects; stoichiometric oxide region; titanium dioxide memristors; to memristor model; Atomic layer deposition; Atomic measurements; Circuits; Current-voltage characteristics; Ion beams; Memristors; Protons; Resistance; Resistors; Switches; Titanium; Transistors; Voltage; Ions; Monte Carlo method; memristor; protons; titanium dioxide;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2045512

Filename

5550408