DocumentCode
1297703
Title
Protection of Memories Suffering MCUs Through the Selection of the Optimal Interleaving Distance
Author
Reviriego, Pedro ; Maestro, Juan Antonio ; Baeg, Sanghyeon ; Wen, ShiJie ; Wong, Richard
Author_Institution
Univ. Antonio de Nebrija, Madrid, Spain
Volume
57
Issue
4
fYear
2010
Firstpage
2124
Lastpage
2128
Abstract
Interleaving, together with single error correction codes (SEC), are common techniques to protect memories against multiple cell upsets (MCUs). This kind of errors is increasingly important as technology scales, becoming a prominent effect, and therefore greatly affecting the reliability of memories. Ideally, the interleaving distance (ID) should be chosen as the maximum expected MCU size. In this way, all errors in an MCU would occur in different logical words, thus being correctable by the SEC codes. However, the use of large interleaving distances usually results in an area increase and a more complex design of memories. In this paper, the selection of the optimal interleaving distance is explored, keeping the area overhead and complexity as low as possible, without compromising memory reliability.
Keywords
digital storage; error correction codes; integrated circuit design; interleaved storage; SEC code; complex memory design; error correction code; maximum expected MCU size; memories suffering mcu; multiple cell upset; optimal interleaving distance; Alpha particles; Approximation methods; CMOS technology; Error analysis; Error correction; Error correction codes; Integrated circuit packaging; Interleaved codes; Mathematical model; Memory management; Neutrons; Protection; Random access memory; Reliability; Terrestrial atmosphere; Interleaving distance; memory; multiple cell upsets (MCUs); soft error;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2010.2042818
Filename
5550430
Link To Document