DocumentCode :
129779
Title :
ZnO/AlN stacked BAW resonators with double resonance
Author :
DeMiguel-Ramos, M. ; Clement, M. ; Goicuria, J. ; Olivares, J. ; Mirea, T. ; Iborra, E. ; Rughoobur, Girish ; Flewitt, Andrew J. ; Milne, W.I.
Author_Institution :
GMME-CEMDATIC-ETSIT, Univ. Politec. de Madrid, Madrid, Spain
fYear :
2014
fDate :
3-6 Sept. 2014
Firstpage :
1484
Lastpage :
1487
Abstract :
We have fabricated BAW resonators with a piezoelectric bilayer that combines ZnO and AlN films. These stacked devices show two resonances that could be used to simultaneously track temperature variations and another parameter, such as loaded mass or pressure. We have assessed the crystal quality of the stacked piezoelectric films using XRD and FT-IR. The TCF of the devices has been measured in a temperature range from 25°C to 100°C. Both resonances show different TCFs, of -15.8 (ppm/°C) and -19.9 (ppm/°C), and quality factors Q over 500, which make them suitable for measurement of two parameters.
Keywords :
Fourier transform spectra; X-ray diffraction; acoustic resonators; aluminium compounds; bulk acoustic wave devices; infrared spectra; piezoelectric materials; zinc compounds; FT-IR analysis; XRD analysis; ZnO-AlN; double resonance; piezoelectric bilayer; stacked BAW resonators; temperature 25 degC to 100 degC; temperature variation; Acoustics; Films; III-V semiconductor materials; Resonant frequency; Temperature measurement; Temperature sensors; Zinc oxide; AlN; Solidly mounted resonators; Stacked resonators; TCF; ZnO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2014 IEEE International
Conference_Location :
Chicago, IL
Type :
conf
DOI :
10.1109/ULTSYM.2014.0367
Filename :
6932237
Link To Document :
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