ZnO/AlN stacked BAW resonators with double resonance

Author

DeMiguel-Ramos, M. ; Clement, M. ; Goicuria, J. ; Olivares, J. ; Mirea, T. ; Iborra, E. ; Rughoobur, Girish ; Flewitt, Andrew J. ; Milne, W.I.

Author_Institution

GMME-CEMDATIC-ETSIT, Univ. Politec. de Madrid, Madrid, Spain

fYear

2014

fDate

3-6 Sept. 2014

Firstpage

1484

Lastpage

1487

Abstract

We have fabricated BAW resonators with a piezoelectric bilayer that combines ZnO and AlN films. These stacked devices show two resonances that could be used to simultaneously track temperature variations and another parameter, such as loaded mass or pressure. We have assessed the crystal quality of the stacked piezoelectric films using XRD and FT-IR. The TCF of the devices has been measured in a temperature range from 25°C to 100°C. Both resonances show different TCFs, of -15.8 (ppm/°C) and -19.9 (ppm/°C), and quality factors Q over 500, which make them suitable for measurement of two parameters.

Keywords

Fourier transform spectra; X-ray diffraction; acoustic resonators; aluminium compounds; bulk acoustic wave devices; infrared spectra; piezoelectric materials; zinc compounds; FT-IR analysis; XRD analysis; ZnO-AlN; double resonance; piezoelectric bilayer; stacked BAW resonators; temperature 25 degC to 100 degC; temperature variation; Acoustics; Films; III-V semiconductor materials; Resonant frequency; Temperature measurement; Temperature sensors; Zinc oxide; AlN; Solidly mounted resonators; Stacked resonators; TCF; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2014 IEEE International

Conference_Location

Chicago, IL

Type

conf

DOI

10.1109/ULTSYM.2014.0367

Filename

6932237