Title :
Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS
Author :
Luu, Aurore ; Austin, Patrick ; Miller, Florent ; Buard, Nadine ; Carrière, Thierry ; Poirot, Patrick ; Gaillard, Remi ; Bafleur, Marise ; Sarrabayrouse, Gerard
Author_Institution :
Univ. catholique de Louvain, Louvain La Neuve, Belgium
Abstract :
This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.
Keywords :
power MOSFET; 2D numerical simulation; SEB mechanism; classic planar VDMOS; classic planar-type technology; sensitive volume; single event burnout; triggering criteria; Atmospheric modeling; Epitaxial growth; Epitaxial layers; Failure analysis; Ions; MOSFET circuits; Numerical simulation; Paper technology; Power MOSFET; Protection; Semiconductor process modeling; Space charge; Space technology; Substrates; Testing; Power MOSFET; SEB; TCAD simulations; sensitive volume; triggering criteria;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2044808
