Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs

Author

Lanzoni, Massimo ; Sangiorgi, Enrico ; Fiegna, Claudio ; Manfredi, Manfredo ; Riccò, Bruno

Author_Institution

DEIS, Bologna Univ., Italy

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

341

Lastpage

343

Abstract

An extended set of experimental data obtained analyzing the spectrum of the light emitted by n-MOSFETs operating at different biases and temperatures is presented. The analysis has been performed in a wide energy range (1.07-2.88 eV). The results suggest that the low- and high-energy parts of the photon distribution may be dominated by different emission mechanisms: electron-hole recombination and bremsstrahlung of hot electrons, respectively. This interpretation is confirmed by the comparison between the measured photon energy distribution and the calculated by Monte Carlo simulations. This comparison leads to the observation that the high-energy tail of the photon distribution reproduces the main features of the hot-electron tail.<>

Keywords

elemental semiconductors; hot carriers; insulated gate field effect transistors; light emitting devices; silicon; 1.07 to 2.9 eV; Monte Carlo simulations; Si; biases; bremsstrahlung of hot electrons; electron-hole recombination; emission mechanisms; high-energy tail; hot-carrier-induced photon emission; hot-electron tail; light spectrum; n-channel MOSFETs; photon energy distribution; temperatures; visible light emission; Electron emission; Hot carriers; MOSFETs; Monte Carlo methods; Optical filters; Photomultipliers; Physics; Probability distribution; Spontaneous emission; Temperature distribution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82081

Filename

82081