DocumentCode
1297842
Title
Schottky barrier focal plane arrays with charge skimming and variable integration time
Author
Mcnutt, Michael J.
Author_Institution
Loral Aerosp. Corp., Newport Beach, CA, USA
Volume
12
Issue
6
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
344
Lastpage
346
Abstract
Presented is a technique for implementing the functions of charge skimming and variable integration time in Schottky-barrier focal plane arrays (FPAs) that utilize a field plate. This technique requires only pulsing the field plate that lies over the diode and is currently DC biased to suppress diode edge leakage. Therefore, no additional structure is needed in the silicon substrate, and the basic readout clocking is unaffected. Any interline transfer FPA can benefit from this approach. Both qualitative theory and confirming experimental results are described.<>
Keywords
Schottky-barrier diodes; image sensors; infrared imaging; FPAs; Schottky barrier focal plane arrays; charge skimming; experimental results; field plate pulsing; interline transfer FPA; unchanged structure; variable integration time; Charge coupled devices; Clocks; Infrared detectors; Lighting; Pulse circuits; Radiation detectors; Schottky barriers; Schottky diodes; Silicides; Silicon radiation detectors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.82082
Filename
82082
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