Title :
A cobalt salicide CMOS process with TiN-strapped polysilicon gates
Author :
Pfiester, James R. ; Mele, Thomas C. ; Limb, Young ; Jones, Robert E. ; Woo, Michael ; Boeck, Bruce ; Gunderson, Craig D.
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
A submicrometer CMOS technology with MOSFET structures consisting of a TiN-strapped polysilicon gate electrode and self-aligned cobalt silicided source/drain junctions is developed. It is shown that the TiN-strapped gates provide a low-sheet-resistance gate electrode without threshold voltage instabilities caused by the lateral dopant interdiffusion of silicided gates. Cobalt silicide creep over the sidewall spacer, which can result in bridging between the source/drain and gate, is also eliminated. Since the source-drain regions are silicided with CoSi/sub 2/, shallow, low-leakage junctions are obtained.<>
Keywords :
CMOS integrated circuits; cobalt compounds; integrated circuit technology; metallisation; semiconductor technology; titanium compounds; CoSi/sub 2/-Si; MOSFET structures; TiN-Si gate; TiN-strapped polysilicon gate electrode; low-leakage junctions; low-sheet-resistance gate electrode; polycrystalline Si gate; salicide CMOS process; salicided drain junction; salicided source junction; self aligned CoSi/sub 2/; submicrometer CMOS technology; Annealing; CMOS process; Cobalt; Electrodes; MOSFET circuits; Oxidation; Silicides; Silicon; Threshold voltage; Tin;
Journal_Title :
Electron Device Letters, IEEE
