DocumentCode
1297862
Title
Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers
Author
Choi, H.K. ; Wang, C.A. ; Karam, N.H.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
3
Issue
4
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
289
Lastpage
291
Abstract
GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 1 mW; 43 mA; 60 mW; GaAs-AlGaAs diode lasers; III-V semiconductor; SOI wafers; Si; differential quantum efficiency; gain guided GRINSCH-SQW lasers; output power; room temperature CW operation; threshold current; Annealing; Diode lasers; Gallium arsenide; Power generation; Power lasers; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Threshold current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.82089
Filename
82089
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