DocumentCode :
1297868
Title :
Effect of paramagnetic impurities on frequency of sapphire-loaded superconducting cavity resonators
Author :
Jones, Stephen K. ; Blair, D.G. ; Buckingham, M.J.
Author_Institution :
Dept. of Phys., Western Australia Univ., Nedlands, WA
Volume :
24
Issue :
6
fYear :
1988
fDate :
3/17/1988 12:00:00 AM
Firstpage :
346
Lastpage :
347
Abstract :
Dielectric loaded microwave cavities show great promise as high Q, highly stable frequency determining elements in microwave oscillators. The frequency of a sapphire loaded superconducting cavity has a temperature dependence displaying a turning point at approximately 6 K. The authors show how this phenomenon can be explained in terms of the superconducting surface reactance and a low level of paramagnetic ion impurity in the sapphire
Keywords :
cavity resonators; microwave devices; microwave oscillators; sapphire; superconducting devices; 6 K; Al2O3; cavity resonators; dielectric loaded microwave cavities; frequency; low level ion impurity; microwave oscillator application; paramagnetic impurities; sapphire loaded superconducting cavity; stable frequency determining elements; superconducting surface reactance; temperature dependence; turning point;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
8209
Link To Document :
بازگشت