DocumentCode
1297873
Title
22 W coherent GaAlAs amplifier array with 400 emitters
Author
Krebs, D. ; Herrick, R. ; No, K. ; Harting, W. ; Struemph, F. ; Driemeyer, D. ; Levy, J.
Author_Institution
McDonnell Douglas Electron. Syst. Co., St. Louis, MO, USA
Volume
3
Issue
4
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
292
Lastpage
295
Abstract
Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87% of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12*6 mm chip.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor laser arrays; 22 W; 400 emitters; AlGaAs GRINSCH-SQW epitaxy; III-V semiconductor; coherent GaAlAs amplifier array; coherent optical signal distribution circuit; multiple emitter travelling wave semiconductor amplifier; optical power; ridge waveguide amplifiers; Distributed amplifiers; Epitaxial growth; Frequency; Integrated optics; Optical amplifiers; Optical waveguides; Power amplifiers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.82090
Filename
82090
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