Title :
22 W coherent GaAlAs amplifier array with 400 emitters
Author :
Krebs, D. ; Herrick, R. ; No, K. ; Harting, W. ; Struemph, F. ; Driemeyer, D. ; Levy, J.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., St. Louis, MO, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87% of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12*6 mm chip.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor laser arrays; 22 W; 400 emitters; AlGaAs GRINSCH-SQW epitaxy; III-V semiconductor; coherent GaAlAs amplifier array; coherent optical signal distribution circuit; multiple emitter travelling wave semiconductor amplifier; optical power; ridge waveguide amplifiers; Distributed amplifiers; Epitaxial growth; Frequency; Integrated optics; Optical amplifiers; Optical waveguides; Power amplifiers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
