High-temperature operation of InGaAs strained quantum-well lasers

Author

Fu, R.J. ; Hong, C.S. ; Chan, E.Y. ; Booher, D.J. ; Figueroa, L.

Author_Institution

Boeing High Technol. Center, Seattle, WA, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

308

Lastpage

310

Abstract

Strained-layer quantum-well (SQW) laser structures have been investigated for avionics applications requiring high-temperature performance. The authors have successfully demonstrated InGaAs-GaAs SQW lasers capable of CW operation up to 200 degrees C with more than 5 mW single-mode optical power. These lasers have an emission wavelength of approximately=980 nm, threshold current density of 200 A/cm/sup 2/, differential quantum efficiency of 60%, high output power of approximately=1 W with 50 mu m stripe, and characteristic temperature of 130-140 K.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1 W; 130 to 140 K; 200 degC; 5 mW; 50 micron; 980 nm; CW operation; III-V semiconductor; InGaAs strained quantum-well lasers; InGaAs-GaAs; avionics applications; characteristic temperature; differential quantum efficiency; emission wavelength; high output power; high temperature operation; single-mode optical power; threshold current density; Aerospace electronics; Fiber lasers; Indium gallium arsenide; Power generation; Power lasers; Pump lasers; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82095

Filename

82095