Title :
Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m
Author :
Liou, K.-Y. ; Dentai, A.G. ; Burrows, E.C. ; Joyner, C.H. ; Burrus, C.A. ; Raybon, G.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Strained-layer single-quantum-well InGaAs-InGaAsP lasers have been fabricated using a novel self-aligned-contact ridge guide structure. The lasers operate with index-guided fundamental transverse mode. The laser cavity length and mirror reflectivities were chosen to achieve laser oscillation in the wavelength range from 1.43 to 1.55 mu m. It is shown that a fiber amplifier pump laser at 1.47 mu m wavelength and a transmission source laser at 1.55 mu m wavelength can be fabricated from a single wafer grown by metalorganic vapor phase epitaxy (MOVPE).<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.43 to 1.55 micron; III-V semiconductor; InGaAs-InGaAsP; MOVPE; SQW strained layer InGaAs-InGaAsP lasers; fiber amplifier pump laser; index-guided fundamental transverse mode; laser cavity length; laser oscillation; metalorganic vapor phase epitaxy; mirror reflectivities; self-aligned-contact ridge guide structure; transmission source laser; Epitaxial growth; Fiber lasers; Gold; Indium gallium arsenide; Laser modes; Optical fibers; Optical waveguides; Polyimides; Pump lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
