Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m

Author

Liou, K.-Y. ; Dentai, A.G. ; Burrows, E.C. ; Joyner, C.H. ; Burrus, C.A. ; Raybon, G.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

311

Lastpage

313

Abstract

Strained-layer single-quantum-well InGaAs-InGaAsP lasers have been fabricated using a novel self-aligned-contact ridge guide structure. The lasers operate with index-guided fundamental transverse mode. The laser cavity length and mirror reflectivities were chosen to achieve laser oscillation in the wavelength range from 1.43 to 1.55 mu m. It is shown that a fiber amplifier pump laser at 1.47 mu m wavelength and a transmission source laser at 1.55 mu m wavelength can be fabricated from a single wafer grown by metalorganic vapor phase epitaxy (MOVPE).<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.43 to 1.55 micron; III-V semiconductor; InGaAs-InGaAsP; MOVPE; SQW strained layer InGaAs-InGaAsP lasers; fiber amplifier pump laser; index-guided fundamental transverse mode; laser cavity length; laser oscillation; metalorganic vapor phase epitaxy; mirror reflectivities; self-aligned-contact ridge guide structure; transmission source laser; Epitaxial growth; Fiber lasers; Gold; Indium gallium arsenide; Laser modes; Optical fibers; Optical waveguides; Polyimides; Pump lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82096

Filename

82096