Title :
High-contrast electron-transfer GaAs-AlGaAs multiple-quantum-well waveguide modulator
Author :
Blum, O. ; Zucker, J.E. ; Chang, T.Y. ; Sauer, N.J. ; Divino, M. ; Jones, K.L. ; Gustafson, T.K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
The development of a GaAs-AlGaAs multiple quantum well electron transfer waveguide modulator is reported. On-off ratios as high as 75:1 are obtained at 864.5 nm of an applied voltage of -5 to 10 V. It is shown that the wavelength and voltage characteristics of the device can be successfully interpreted in terms of the calculated energy band diagram.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; optical waveguides; semiconductor quantum wells; -5 to 10 V; 864.5 nm; GaAs-AlGaAs; GaAs-AlGaAs multiple-quantum-well; III-V semiconductor; electron transfer waveguide modulator; energy band diagram; high contrast; on off ratios; voltage characteristics; wavelength characteristics; Absorption; Electrons; Gallium arsenide; Intensity modulation; Microscopy; Photoconductivity; Quantum well devices; Reservoirs; Stark effect; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
