DocumentCode :
1297961
Title :
Operation characteristics of three-terminal hybrid structure with multiple-quantum-well reflection modulator and heterojunction phototransistor
Author :
Matsuo, S. ; Amano, C. ; Kurokawa, T.
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Volume :
3
Issue :
4
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
330
Lastpage :
332
Abstract :
The operation characteristics of optically controlled three-terminal gates consisting of a multiple quantum well (MQW) reflection modulator and a heterojunction phototransistor (HPT) are discussed. It is found that the photonic gates, in which both components are electrically connected in series and parallel, operate as NOR and OR gates, respectively. The photonic gates exhibit a high contrast ratio of more than 20 dB as well as optical gain.<>
Keywords :
electro-optical devices; light reflection; optical logic; optical modulation; optical switches; phototransistors; semiconductor quantum wells; MQW; NOR gates; OR gates; heterojunction phototransistor; high contrast ratio; multiple-quantum-well reflection modulator; operation characteristics; optical gain; optical logic; optical switches; optically controlled three-terminal gates; photonic gates; three-terminal hybrid structure; Absorption; Bandwidth; Gallium arsenide; Heterojunctions; Insertion loss; Optical modulation; Optical reflection; Photoconductivity; Phototransistors; Quantum well devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.82102
Filename :
82102
Link To Document :
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