Operation characteristics of three-terminal hybrid structure with multiple-quantum-well reflection modulator and heterojunction phototransistor

Author

Matsuo, S. ; Amano, C. ; Kurokawa, T.

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

330

Lastpage

332

Abstract

The operation characteristics of optically controlled three-terminal gates consisting of a multiple quantum well (MQW) reflection modulator and a heterojunction phototransistor (HPT) are discussed. It is found that the photonic gates, in which both components are electrically connected in series and parallel, operate as NOR and OR gates, respectively. The photonic gates exhibit a high contrast ratio of more than 20 dB as well as optical gain.<>

Keywords

electro-optical devices; light reflection; optical logic; optical modulation; optical switches; phototransistors; semiconductor quantum wells; MQW; NOR gates; OR gates; heterojunction phototransistor; high contrast ratio; multiple-quantum-well reflection modulator; operation characteristics; optical gain; optical logic; optical switches; optically controlled three-terminal gates; photonic gates; three-terminal hybrid structure; Absorption; Bandwidth; Gallium arsenide; Heterojunctions; Insertion loss; Optical modulation; Optical reflection; Photoconductivity; Phototransistors; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82102

Filename

82102