Title :
Operation characteristics of three-terminal hybrid structure with multiple-quantum-well reflection modulator and heterojunction phototransistor
Author :
Matsuo, S. ; Amano, C. ; Kurokawa, T.
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
4/1/1991 12:00:00 AM
Abstract :
The operation characteristics of optically controlled three-terminal gates consisting of a multiple quantum well (MQW) reflection modulator and a heterojunction phototransistor (HPT) are discussed. It is found that the photonic gates, in which both components are electrically connected in series and parallel, operate as NOR and OR gates, respectively. The photonic gates exhibit a high contrast ratio of more than 20 dB as well as optical gain.<>
Keywords :
electro-optical devices; light reflection; optical logic; optical modulation; optical switches; phototransistors; semiconductor quantum wells; MQW; NOR gates; OR gates; heterojunction phototransistor; high contrast ratio; multiple-quantum-well reflection modulator; operation characteristics; optical gain; optical logic; optical switches; optically controlled three-terminal gates; photonic gates; three-terminal hybrid structure; Absorption; Bandwidth; Gallium arsenide; Heterojunctions; Insertion loss; Optical modulation; Optical reflection; Photoconductivity; Phototransistors; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE