A simple high-speed Si Schottky photodiode

Author

Mullins, B.W. ; Soares, S.F. ; McArdle, K.A. ; Wilson, C.M. ; Brueck, S.R.J.

Author_Institution

New Mexico Univ., Albuquerque, NM, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

360

Lastpage

362

Abstract

Design, fabrication, and UV-heterodyne characterization of Ni-Si-Ni metal-semiconductor-metal (MSM) Schottky barrier photodetectors is reported. Planar detectors were fabricated, with a simple 3-level lithography process on bulk Si, in both simple-gap and interdigitated geometries with gap dimensions from 1 to 5 mu m. Frequency response of these devices was characterized using a CW-laser heterodyne system at 334.5 nm. For a 4.5- mu m interdigitated device, a 3-dB response of 16 GHz is measured, giving 22 GHz when deconvolved from the package/connector. A detailed theoretical model of the photodiode response incorporating effects of carrier transport and device geometry is in excellent agreement with the measurement. This model predicts a 86-GHz 3-dB response for the 1- mu m gap geometry devices.<>

Keywords

Schottky-barrier diodes; metal-semiconductor-metal structures; nickel; photodetectors; photodiodes; silicon; 1 to 5 micron; 16 GHz; 22 GHz; 3-level lithography process; 334.5 nm; CW-laser heterodyne system; MSM photodiodes; Ni-Si-Ni; Schottky barrier photodetectors; Si; UV-heterodyne characterization; carrier transport; high-speed Si Schottky photodiode; interdigitated geometries; metal-semiconductor-metal; photodiode response; planar detectors; simple-gap geometries; Detectors; Fabrication; Frequency response; Geometry; Lithography; Packaging; Photodetectors; Photodiodes; Schottky barriers; Solid modeling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82112

Filename

82112