Title :
Mobility Modeling Considerations for Radiation Effects Simulations in Silicon
Author :
Cummings, Daniel J. ; Witulski, Arthur F. ; Park, Hyunwoo ; Schrimpf, Ronald D. ; Thompson, Scott E. ; Law, Mark E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
The results of semiconductor device simulations are highly dependent on the electron and hole mobility models. The manner in which mobility is modeled at high-injection levels is especially important for single-event upset simulations due to the large number of electron-hole pairs generated along a particle strike path. This paper presents an approach to modeling mobility that describes majority and minority carrier mobility, carrier-carrier scattering, and temperature dependence in a computationally efficient form relevant for radiation effects simulations in silicon.
Keywords :
hole mobility; radiation effects; semiconductor device models; simulation; Si; carrier-carrier scattering; electron-hole pairs; hole mobility models; minority carrier mobility; mobility modeling considerations; radiation effects simulations; semiconductor device simulations; Charge carrier processes; Computational modeling; Data models; Doping; Electron mobility; Particle scattering; Radiation effects; Scattering; Semiconductor devices; Semiconductor process modeling; Silicon; Single event upset; Temperature dependence; Carrier-carrier scattering; device simulation; mobility model; radiation effects; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2052831
