Title :
A 622 Mb/s monolithically integrated InGaAs-InP high-sensitivity transimpedance photoreceiver and a multichannel receiver array
Author :
Akahori, Y. ; Ikeda, M. ; Uchida, N. ; Kohzen, A. ; Temmyo, J. ; Yoshida, J. ; Kokubon, T. ; Suto, K.
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
4/1/1991 12:00:00 AM
Abstract :
A long-wavelength monolithically integrated high-sensitivity single-channel photoreceiver and a two-channel receiver array which requires only a single 5-V power supply are demonstrated. Both devices were fabricated using Be ion implantation and MOVPE grown crystals. The single-channel photoreceiver offers a sensitivity of -33.6 dBm for 622 Mb/s together with wide dynamic range of 21.6 dB. A two-channel receiver array exhibited a sensitivity of -32 dBm and a dynamic range of 22 dB with a well-suppressed crosstalk level below -30 dB.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; receivers; semiconductor growth; sensitivity; vapour phase epitaxial growth; 5 V; 622 Mbit/s; Be/sup +/; InGaAs-InP; MOVPE grown crystals; high-sensitivity transimpedance photoreceiver; ion implantation; monolithically integrated; multichannel receiver array; semiconductors; sensitivity; single-channel photoreceiver; two-channel receiver; well-suppressed crosstalk level; wide dynamic range; Dynamic range; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Indium gallium arsenide; Indium phosphide; Ion implantation; Laboratories; Resistors;
Journal_Title :
Photonics Technology Letters, IEEE
