• DocumentCode
    1298235
  • Title

    Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

  • Author

    Mekki, J. ; Moll, M. ; Fahrer, M. ; Glaser, M. ; Dusseau, L.

  • Author_Institution
    CERN, Geneva, Switzerland
  • Volume
    57
  • Issue
    4
  • fYear
    2010
  • Firstpage
    2066
  • Lastpage
    2073
  • Abstract
    The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 × 1015 neq/cm2 have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.
  • Keywords
    p-i-n diodes; radiation monitoring; silicon radiation detectors; commercial BPW34FS silicon p-i-n diode; radiation damage effect; radiation monitoring sensors; radiation response; super-LHC experiments; Current measurement; Detectors; Large Hadron Collider; Neutrons; P-i-n diodes; Protons; Radiation monitoring; Semiconductor diodes; Sensor phenomena and characterization; Silicon; Temperature measurement; Voltage; Voltage measurement; Accelerators; p-i-n diodes; particle beams; radiation damage; radiation monitoring;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2044191
  • Filename
    5550510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1298235