DocumentCode :
1298235
Title :
Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
Author :
Mekki, J. ; Moll, M. ; Fahrer, M. ; Glaser, M. ; Dusseau, L.
Author_Institution :
CERN, Geneva, Switzerland
Volume :
57
Issue :
4
fYear :
2010
Firstpage :
2066
Lastpage :
2073
Abstract :
The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 × 1015 neq/cm2 have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.
Keywords :
p-i-n diodes; radiation monitoring; silicon radiation detectors; commercial BPW34FS silicon p-i-n diode; radiation damage effect; radiation monitoring sensors; radiation response; super-LHC experiments; Current measurement; Detectors; Large Hadron Collider; Neutrons; P-i-n diodes; Protons; Radiation monitoring; Semiconductor diodes; Sensor phenomena and characterization; Silicon; Temperature measurement; Voltage; Voltage measurement; Accelerators; p-i-n diodes; particle beams; radiation damage; radiation monitoring;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2044191
Filename :
5550510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1298235
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