Title :
A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers
Author :
Tan, Y. ; Kumar, M. ; Sin, J.K.O. ; Cai, J. ; Lau, J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
The authors describe a bulk silicon LDMOS technology, which is compatible with CMOS and passive components, for the implementation of RF integrated power amplifiers (IPA´s) used in portable wireless communication applications. This technology allows complete integration of the low cost and low power front-end circuits with the baseband circuits for single-chip wireless communication systems. The LDMOS transistor (0.35 μm channel length, 3.85 μm drift length, 3 GHz fT and 20 V breakdown voltage), CMOS transistors (1.5 μm channel length), and high Q-factor (up to 6.10 at 900 MHz and 7.14 at 1.8 GHz) on-chip inductor are designed and fabricated to show the feasibility of the IPA implementation.
Keywords :
CMOS integrated circuits; UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; elemental semiconductors; integrated circuit technology; mobile radio; power MOSFET; power integrated circuits; silicon; transceivers; 1.5 to 3.85 micron; 20 V; 3 GHz; 900 MHz to 1.8 GHz; CMOS compatible technology; CMOS transistors; LDMOS transistor; Si; baseband circuits; bulk Si LDMOS technology; high Q-factor onchip inductor; integrated RF power amplifiers; lateral DMOS technology; low power front-end circuits; passive components; portable wireless communication applications; single-chip wireless communication systems; Baseband; CMOS technology; Costs; Integrated circuit technology; Power amplifiers; Q factor; Radio frequency; Radiofrequency amplifiers; Silicon; Wireless communication;
Journal_Title :
Electron Device Letters, IEEE
