A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers

Author

Tan, Y. ; Kumar, M. ; Sin, J.K.O. ; Cai, J. ; Lau, J.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

Volume

21

Issue

2

fYear

2000

Firstpage

82

Lastpage

84

Abstract

The authors describe a bulk silicon LDMOS technology, which is compatible with CMOS and passive components, for the implementation of RF integrated power amplifiers (IPA´s) used in portable wireless communication applications. This technology allows complete integration of the low cost and low power front-end circuits with the baseband circuits for single-chip wireless communication systems. The LDMOS transistor (0.35 μm channel length, 3.85 μm drift length, 3 GHz f_T and 20 V breakdown voltage), CMOS transistors (1.5 μm channel length), and high Q-factor (up to 6.10 at 900 MHz and 7.14 at 1.8 GHz) on-chip inductor are designed and fabricated to show the feasibility of the IPA implementation.

Keywords

CMOS integrated circuits; UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; elemental semiconductors; integrated circuit technology; mobile radio; power MOSFET; power integrated circuits; silicon; transceivers; 1.5 to 3.85 micron; 20 V; 3 GHz; 900 MHz to 1.8 GHz; CMOS compatible technology; CMOS transistors; LDMOS transistor; Si; baseband circuits; bulk Si LDMOS technology; high Q-factor onchip inductor; integrated RF power amplifiers; lateral DMOS technology; low power front-end circuits; passive components; portable wireless communication applications; single-chip wireless communication systems; Baseband; CMOS technology; Costs; Integrated circuit technology; Power amplifiers; Q factor; Radio frequency; Radiofrequency amplifiers; Silicon; Wireless communication;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.821677

Filename

821677