• DocumentCode
    1298362
  • Title

    Interfacial Microstructures and Thermodynamics of Thermosonic Cu-Wire Bonding

  • Author

    Junhui Li ; Linggang Liu ; Luhua Deng ; Bangke Ma ; Fuliang Wang ; Lei Han

  • Author_Institution
    Sch. of Mech. & Electr. Eng., Central South Univ., Changsha, China
  • Volume
    32
  • Issue
    10
  • fYear
    2011
  • Firstpage
    1433
  • Lastpage
    1435
  • Abstract
    The interfacial microstructures of the Cu-wire bonding to an Al pad are investigated first by using an X-ray microdiffractometer and high-resolution transmission electron microscopy. It was found that the intermetallic compounds hardly formed at the Cu/Al interface during the thermosonic Cu-wire bonding process. However, when heating temperature is elevated to 340°C which increases energy levels of Cu/Al, the intermetallic phases Al2Cu and Al4Cu9 can form and reach to 130 nm thick within 20 ms due to atomic interdiffusion and reaction activated by ultrasonic energy and heat at the Cu/Al interface. The Al side of the interface is aluminum-rich Al2 Cu with lattice parameters a = 6.067 Å and c = 4.864 Å, and the Cu side is copper-rich Al4Cu9 with lattice parameter a = 8.706 Å. Bonding strength and bondability increase significantly after forming the Cu/Al intermetallic phases.
  • Keywords
    X-ray diffractometers; chemical interdiffusion; copper alloys; heating; lattice constants; lead bonding; thermodynamics; transmission electron microscopy; ultrasonic applications; Al2Cu; Al4Cu9; Cu-Al; X-ray microdiffractometer; atomic interdiffusion; atomic reaction; bondability; bonding strength; energy levels; heating temperature; high-resolution transmission electron microscopy; interfacial microstructures; intermetallic compounds; intermetallic phases; lattice parameters; thermodynamics; thermosonic Cu-wire bonding; ultrasonic energy; Acoustics; Bonding; Copper; Gold; Heating; Intermetallic; Wires; Bonding interface; Cu-wire bonding; bonding strength; intermetallic compounds (IMCs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2161749
  • Filename
    5985470