Title :
Low threshold current operation of 1.3 μm narrow beam divergence tapered-thickness waveguide lasers
Author :
Yamamoto, T. ; Kobayashi, H. ; Ishikawa, T. ; Takeuchi, T. ; Watanabe, T. ; Fujii, T. ; Ogita, S. ; Kobayashi, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
1/2/1997 12:00:00 AM
Abstract :
Low threshold current operation of 1.3 μm narrow beam divergence tapered-thickness waveguide lasers is demonstrated by high-reflection coating to both facets and optimising the gain region length. A 320 μm long laser which consisted of 120 μm long gain region and 200 μm lone tapered waveguide showed low threshold currents of 3.2 mA at 25°C and 10.5 mA at 85°C as well as FWHM beam divergence of <10°. These threshold currents are the lowest data ever reported among spot-size transformer integrated lasers, to the authors´ knowledge
Keywords :
laser beams; semiconductor lasers; waveguide lasers; 1.3 micron; 25 to 85 C; 3.2 to 10.5 mA; FWHM beam divergence; diode laser; gain region length; high-reflection coating; spot-size transformer integrated laser; tapered-thickness waveguide laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970051
