• DocumentCode
    129862
  • Title

    Low jitter FBAR based chip scale precision oscillator

  • Author

    Sridaran, Suresh ; Fouquet, Julie ; Parker, Reed ; Small, Martha ; Ortiz, S. ; Bi, Frank ; Gilbert, Stephen R. ; Callaghan, Lori ; Ruby, Rich

  • Author_Institution
    Wireless Semicond. Div., Avago Technol., San Jose, CA, USA
  • fYear
    2014
  • fDate
    3-6 Sept. 2014
  • Firstpage
    85
  • Lastpage
    88
  • Abstract
    We present a FBAR oscillator that operates at 628MHz, achieves low jitter <;50fs and good frequency stability all while fitting in a small package of 1.1 × 0.9 × 0.25 mm3. The chip-scale oscillator employs a feedback circuitry in the encapsulating lid of a FBAR resonator and makes use of a differential Colpitts oscillator design fabricated in 0.6μm CMOS technology. To achieve the frequency precision required for a reference oscillator, we demonstrate the ability to tune the oscillator over 700ppm using a switched capacitor scheme to compensate for manufacturing tolerances. For achieving frequency stability over temperature and packaging stress, the FBAR resonators used in these oscillators employ silicon dioxide layer temperature compensation and a stress relieved structure respectively. The measured integrated jitter (12kHz to 20MHz) for the oscillators with a supply voltage of 3.3V across a wafer is 33fs with a far from carrier phase noise of -170dBc/Hz .The median current draw from the supply is 16.5mA and the output power measured at a 50ohm load using a balun is 0dBm.These oscillators are suitable for co-integration as reference clocks in high speed communication ICs where size and performance are paramount.
  • Keywords
    CMOS integrated circuits; acoustic resonators; bulk acoustic wave devices; jitter; switched capacitor networks; thin film circuits; CMOS technology; FBAR based precision oscillator; FBAR resonator; chip scale precision oscillator; current 16.5 mA; differential Colpitts oscillator design; feedback circuitry; frequency 12 MHz to 20 MHz; frequency 628 MHz; frequency precision; frequency stability; integrated jitter; low jitter precision oscillator; median current draw; reference oscillator; resistance 50 ohm; silicon dioxide layer temperature compensation; size 0.25 mm; size 0.9 mm; size 1.1 mm; stress relieved structure; switched capacitor scheme; time 33 fs; voltage 3.3 V; Film bulk acoustic resonators; Jitter; Phase noise; Resonant frequency; Stress; Temperature measurement; BAW; FBAR; chip-scale packaged oscillator; frequency reference; high Q resonator; zero drift resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2014 IEEE International
  • Conference_Location
    Chicago, IL
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2014.0022
  • Filename
    6932321