Title :
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters
Author :
Martín-Martínez, Javier ; Gerardin, Simone ; Amat, Esteve ; Rodríguez, Rosana ; Nafría, Montserrat ; Aymerich, Xavier ; Paccagnella, Alessandro ; Ghidini, Gabriella
Author_Institution :
Dept. of Electron. Eng., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model.
Keywords :
CMOS integrated circuits; ageing; hot carriers; invertors; BSIM4 SPICE model; CMOS inverter; NMOS transistor; aging mechanism; bias temperature instabilities; channel-hot-carrier degradation; Aging; Circuits; Degradation; Inverters; MOS devices; MOSFETs; SPICE; Stress; Temperature; Voltage; BTI; CMOS; channel hot carriers; reliability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2026206
