• DocumentCode
    1298793
  • Title

    On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

  • Author

    Tiggelman, M.P.J. ; Reimann, K. ; van Rijs, F. ; Schmitz, J. ; Hueting, R.J.E.

  • Author_Institution
    MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
  • Volume
    56
  • Issue
    9
  • fYear
    2009
  • Firstpage
    2128
  • Lastpage
    2136
  • Abstract
    A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (eta) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure.
  • Keywords
    ferroelectric capacitors; microwave devices; varactors; ferroelectric varactor; frequency 2 GHz; microwave frequency; planar microelectromechanical capacitive switch; quality factor; transistor-switched capacitor; tunable dielectrics; tunable high-frequency capacitor; tuning ratio; varactor diode; Capacitors; Ferroelectric materials; Gallium arsenide; Microwave frequencies; Q factor; Semiconductor diodes; Time of arrival estimation; Tuning; Varactors; Visualization; Ferroelectric capacitors; MEMS; field-effect transistor; losses; microswitches; microwave technology; semiconductor devices; tuning; varactors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2026391
  • Filename
    5204273