Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Author

Howe, Christina L. ; Weller, Robert A. ; Reed, Robert A. ; Sierawski, Brian D. ; Marshall, Paul W. ; Marshall, Cheryl J. ; Mendenhall, Marcus H. ; Schrimpf, Ronald D. ; Hubbs, John E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

4

fYear

2009

Firstpage

2167

Lastpage

2170

Abstract

The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.

Keywords

elemental semiconductors; focal planes; proton effects; semiconductor diodes; silicon; Si; focal plane array; particle scattering; proton-induced energy deposition; proton-irradiated diode array; semiconductor devices; silicon diode arrays; single event-induced charge generation; Indium; NASA; PIN photodiodes; Particle scattering; Protons; Semiconductor diodes; Semiconductor materials; Sensor arrays; Silicon; Space technology; Direct ionization; Geant4; Monte Carlo; energy deposited; focal plane array; nuclear reactions;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2013348

Filename

5204512