Temperature Dependency of Charge Sharing and MBU Sensitivity in 130-nm CMOS Technology

Author

Liu, Biwei ; Chen, Shuming ; Liang, Bin ; Liu, Zheng ; Zhao, Zhenyu

Author_Institution

Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China

Volume

56

Issue

4

fYear

2009

Firstpage

2473

Lastpage

2479

Abstract

This paper investigates the temperature dependency of charge sharing in 130-nm CMOS technology over a temperature range of 200 to 420 K. TCAD simulation results show the charge sharing collection increases significantly with temperature rising, which is 65% ~ 317%. The LET_th of MBU in two SRAM cells is also quantified. The result reveals that the upset LET_th of the passive cell decreases in the whole temperature range, which is different from the parabolic relationship of single-event upset´s temperature dependency.

Keywords

CMOS integrated circuits; SRAM chips; CMOS technology; SRAM cells; TCAD simulation; charge sharing collection; multiple-bit upset sensitivity; passive cell; single-event upset temperature dependency; temperature 200 K to 420 K; CMOS technology; Integrated circuit technology; MOS devices; Paper technology; Random access memory; Single event upset; Space technology; Temperature dependence; Temperature distribution; Temperature sensors; Charge sharing; multiple-bit upset (MBU); parasitic bipolar; temperature dependency;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2022267

Filename

5204523