Title :
Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study
Author :
Munteanu, Daniela ; Autran, Jean-Luc
Author_Institution :
IM2NP, CNRS, Marseille, France
Abstract :
The single-event response of 3-D Multi-Channel nanowire MOSFETs (MCFET) is investigated using 3-D numerical simulation. The variation with time of the main internal parameters (electrostatic potential and electron density) of the MCFET after the ion strike is analyzed in detail. The drain current transients and collected charge depend on the ion strike location, direction, and track radius. The lateral spacing between adjacent nanowire stacks is found to be a key-parameter in the analysis of the worst case location of the ion strike.
Keywords :
MOSFET; electron density; ion beam effects; nanoelectronics; nanowires; semiconductor device models; semiconductor quantum wires; transient response; 3D multichannel nanowire MOSFET; 3D numerical simulation; charge collection; drain current transients; electron density; electrostatic potential; heavy ion irradiation; single-event response; transient response; Current density; Electrodes; Electrons; Electrostatic analysis; Fault location; FinFETs; MOSFETs; Nanoscale devices; Numerical simulation; Transient response; Charge collection; GAA; heavy ion; multi-channel nanowire MOSFETs; multiple-gate MOSFET; single event transient;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2016564
