Title :
Powerful mid-infrared light emitting diodes for pollution monitoring
Author :
Popov, A.A. ; Sherstnev, V.V. ; Yakovlev, Y.P. ; Baranov, A.N. ; Alibert, C.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg
fDate :
1/2/1997 12:00:00 AM
Abstract :
Powerful mid-infrared (1.7-4.8 μm) light emitting diodes were manufactured by liquid phase epitaxy using GaSb-InAs compounds. Their output optical power was enhanced up to 2-3.5 mW using symmetrical double heterostructures with large band offsets. These diodes can be used as narrow bandwidth emitters for cost-reduced setups for atmospheric pollution monitoring
Keywords :
air pollution measurement; gas sensors; light emitting diodes; liquid phase epitaxial growth; 1.7 to 4.8 micron; 2 to 3.5 mW; GaInAsSb-GaAlAsSb; IR LED; IR light emitting diodes; LPE growth; atmospheric pollution monitoring; large band offsets; liquid phase epitaxy; narrow bandwidth emitters; output optical power; powerful mid-infrared LED; symmetrical double heterostructures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970002
