Title :
Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure
Author :
Davidson, Jimmy L. ; Kang, Weng Poo ; Subramanian, Karthik ; Holmes-Siedle, Andrew G. ; Reed, Robert A. ; Galloway, Kenneth F.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
This paper reports the first neutron exposure on diamond electronic test structures for their possible application in very high fluence neutron conditions. The behavior of diamond lateral emission diodes after high neutron fluence of 4.4times1013 neutrons/cm2 is evaluated. No noticeable changes in the device structure and electrical behavior, specifically resistivity, dilation and emission characteristics were observed.
Keywords :
diamond; electrical resistivity; field emission; vacuum microelectronics; C; diamond vacuum electronic device; dilation; electrical behavior; electrical resistivity; emission characteristics; lateral emission diodes; neutron fluence exposure; vacuum field emission microelectronic devices; Diamond-like carbon; Electron sources; Microelectronics; Nanoscale devices; Neutrons; Power systems; Solid state circuits; Temperature; Vacuum systems; Vacuum technology; Carbon; dosimetry; lateral device; nanodiamond; neutron fluence; reactors; vacuum field emission microelectronics (VFEM);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2020603
