• DocumentCode
    1299152
  • Title

    A Self-Checking Scheme to Mitigate Single Event Upset Effects in SRAM-Based FPAAs

  • Author

    Balen, Tiago R. ; Leite, Franco ; Kastensmidt, Fernanda Lima ; Lubaszewski, Marcelo

  • Author_Institution
    Centro Univ. Lasalle-UNILASALLE, Canoas, Brazil
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1950
  • Lastpage
    1957
  • Abstract
    In this work the problem of Single Event Upset (SEU) is considered in a recent analog technology: The Field Programmable Analog Arrays (FPAAs). Some FPAA models are based on SRAM memory cells to implement the user programmability, which makes this kind of device vulnerable to SEU when employed in applications susceptible to the incidence of radiation. In the former part of this work some fault injection experiments are made in order to investigate the effects of SEU in the SRAM blocks of a commercial FPAA. For this purpose, single bit inversions are injected in the FPAA programming bitstream, when an oscillator module is programmed. In a second moment, a self-checking scheme using the studied FPAA is proposed. This scheme, which is built from the FPAA programming resources, is able to restore the original programming data if an error is detected. Fault injection is also performed to investigate the reliability of the proposed scheme when the bitstream section which controls the checker blocks is corrupted due to a SEU.
  • Keywords
    SRAM chips; field programmable analogue arrays; radiation effects; reliability; FPAA; SRAM memory cells; bitstream section; fault injection; field programmable analog arrays; mitigate single event upset effects; original programming data; oscillator module; radiation incidence; reliability; self-checking scheme; Analog circuits; Circuit faults; Digital circuits; Field programmable analog arrays; Field programmable gate arrays; Integrated circuit interconnections; Oscillators; Prototypes; Random access memory; Single event upset; Field programmable analog arrays; self-checking; self-recovering; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2013347
  • Filename
    5204593