DocumentCode :
1299204
Title :
Investigation of Growth Conditions of CdTe Thick Films on Properties and Demands for X-Ray Detector Applications
Author :
Sorgenfrei, Ralf ; Greiffenberg, Dominic ; Fiederle, Michael
Author_Institution :
Freiburger Materialforschungszentrum (FMF), Albert-Ludwigs-Univ. Freiburg, Freiburg, Germany
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1768
Lastpage :
1774
Abstract :
CdTe thick films were prepared by vacuum deposition on amorphous substrates using MBE technique. The growth was performed at different temperatures to investigate the development of the growth rate, surface morphology, structure and optical properties. Properties of films deposited with a single CdTe source are compared with films grown with an additional Cd source. The growth experiments are discussed with regard to demands for X-ray detector applications.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; surface morphology; vacuum deposition; CdTe; MBE technique; Si-SiO2; Si-SiO2 substrates; X-ray detector; amorphous substrates; growth conditions; optical properties; semiconductor thick films; surface morphology; vacuum deposition; Crystalline materials; Medical services; Molecular beam epitaxial growth; Optical films; Substrates; Surface morphology; Temperature; Thick films; X-ray detection; X-ray detectors; CdTe; direct growth; polycrystalline; thick films;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2018842
Filename :
5204600
Link To Document :
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