DocumentCode :
1299234
Title :
Total Ionizing Dose Effects on Ge pMOSFETs With High- 
Gate Stack: On/Off Current Ratio
Author :
Kulkarni, S.R. ; Schrimpf, R.D. ; Galloway, K.F. ; Arora, Rajun ; Claeys, Cor ; Simoen, Eddy
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
1926
Lastpage :
1930
Abstract :
The results of total ionizing dose irradiation on p-channel depletion mode MOSFETs fabricated on Ge-on-Si substrates with a TiN/TaN/HfO2 gate stack are reported. There is no significant change observed in gate leakage current, threshold voltage, or transconductance at the maximum total dose of 3 Mrad(SiO2), but there is a reduction in the on/off current ratio of the devices as the total dose increases. This reduction is due to an increase in drain-substrate junction leakage current, which is dominated by an increase in surface generation current.
Keywords :
MOSFET; dosimetry; leakage currents; radiation effects; Ge pMOSFET; Ge-Si; Ge-on-Si substrate; TiN-TaN-HfO2 gate stack; drain-substrate junction leakage current; high-k gate stack; ionizing dose irradiation effect; on-off current ratio; p-channel depletion mode; surface generation gate leakage current; transconductance; Charge carrier processes; Dielectric substrates; Hafnium oxide; Ionizing radiation; Leakage current; MOSFETs; Radiation effects; Threshold voltage; Tin; Transconductance; Germanium transistor; high-$k$
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2015664
Filename :
5204604
Link To Document :
