• DocumentCode
    1299256
  • Title

    Recent Results in TlBr Detector Crystals Performance

  • Author

    Shorohov, M. ; Kouznetsov, Mihail ; Lisitskiy, Igor ; Ivano, Viktor ; Gostilo, Vladimir ; Owens, Alan

  • Author_Institution
    Bruker Baltic Ltd., Riga, Latvia
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1855
  • Lastpage
    1858
  • Abstract
    Recent developments in TlBr material preparation and growth technology have led to much improved crystal quality, detector performances and most importantly, reproducibility. In this paper, we describe some of the technological steps we have developed that have allowed us to produce reproducible spectrometric grade crystals for detector applications and present spectroscopic results. Typical crystals have a specific resistance of (3-5) times1011 Ohm-cm and mobility-life time products of about ~10-4 cm2 /V, for both electrons and the holes. After fabrication into simple planar detectors of area 5 times 5 mm2 and thickness 2 mm, spectral resolutions of 0.8, 1.4, 2.1, and 7.1 keV, have been achieved at incident energies of 5.9, 59.6, 122, and 662 keV, respectively. These results were obtained without collimation or employing single carrier sensing or depth correction techniques.
  • Keywords
    carrier lifetime; crystal growth from melt; materials preparation; semiconductor counters; semiconductor growth; semiconductor materials; thallium compounds; Bridgeman-Stockbarger method; TlBr; carrier sensing; crystal growth; crystal quality; electrons-hole lifetime; growth technology; material preparation; mobility-lifetime product; semiconducting material; size 2 mm; spectrometric grade crystal; Atom optics; Crystalline materials; Crystallization; Crystals; Detectors; Fabrication; Impurities; Materials preparation; Purification; Spectroscopy; TlBr detector; TlBr detectors performance; transport performance of TlBr crystals;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2022015
  • Filename
    5204607