Title :
Recent Results in TlBr Detector Crystals Performance
Author :
Shorohov, M. ; Kouznetsov, Mihail ; Lisitskiy, Igor ; Ivano, Viktor ; Gostilo, Vladimir ; Owens, Alan
Author_Institution :
Bruker Baltic Ltd., Riga, Latvia
Abstract :
Recent developments in TlBr material preparation and growth technology have led to much improved crystal quality, detector performances and most importantly, reproducibility. In this paper, we describe some of the technological steps we have developed that have allowed us to produce reproducible spectrometric grade crystals for detector applications and present spectroscopic results. Typical crystals have a specific resistance of (3-5) times1011 Ohm-cm and mobility-life time products of about ~10-4 cm2 /V, for both electrons and the holes. After fabrication into simple planar detectors of area 5 times 5 mm2 and thickness 2 mm, spectral resolutions of 0.8, 1.4, 2.1, and 7.1 keV, have been achieved at incident energies of 5.9, 59.6, 122, and 662 keV, respectively. These results were obtained without collimation or employing single carrier sensing or depth correction techniques.
Keywords :
carrier lifetime; crystal growth from melt; materials preparation; semiconductor counters; semiconductor growth; semiconductor materials; thallium compounds; Bridgeman-Stockbarger method; TlBr; carrier sensing; crystal growth; crystal quality; electrons-hole lifetime; growth technology; material preparation; mobility-lifetime product; semiconducting material; size 2 mm; spectrometric grade crystal; Atom optics; Crystalline materials; Crystallization; Crystals; Detectors; Fabrication; Impurities; Materials preparation; Purification; Spectroscopy; TlBr detector; TlBr detectors performance; transport performance of TlBr crystals;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2022015