Title :
Averaged LET Spectra for SEE Rate Prediction for Power Devices
Author :
Kuboyama, Satoshi ; Ikeda, Naomi ; Satoh, Yohei ; Hirao, Toshio ; Tamura, Takashi
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
A new SEE rate prediction methodology is proposed for power devices. The radiation environment was specified by the averaged LET spectra to take into account the considerably thicker sensitive layer of power devices.
Keywords :
power MOSFET; radiation effects; averaged LET spectra; power MOSFET; power devices; radiation environment; single-event effect rate prediction; Circuit testing; Integrated circuit reliability; Integrated circuit testing; Iron; MOSFET circuits; Power MOSFET; Radiation effects; Rectifiers; Silicon carbide; Voltage; LET spectrum; SEE rate; power MOSFET; radiation effect;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2012708
