• DocumentCode
    1299260
  • Title

    Averaged LET Spectra for SEE Rate Prediction for Power Devices

  • Author

    Kuboyama, Satoshi ; Ikeda, Naomi ; Satoh, Yohei ; Hirao, Toshio ; Tamura, Takashi

  • Author_Institution
    Japan Aerosp. Exploration Agency, Tsukuba, Japan
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    2056
  • Lastpage
    2060
  • Abstract
    A new SEE rate prediction methodology is proposed for power devices. The radiation environment was specified by the averaged LET spectra to take into account the considerably thicker sensitive layer of power devices.
  • Keywords
    power MOSFET; radiation effects; averaged LET spectra; power MOSFET; power devices; radiation environment; single-event effect rate prediction; Circuit testing; Integrated circuit reliability; Integrated circuit testing; Iron; MOSFET circuits; Power MOSFET; Radiation effects; Rectifiers; Silicon carbide; Voltage; LET spectrum; SEE rate; power MOSFET; radiation effect;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2012708
  • Filename
    5204608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1299260