DocumentCode :
1299260
Title :
Averaged LET Spectra for SEE Rate Prediction for Power Devices
Author :
Kuboyama, Satoshi ; Ikeda, Naomi ; Satoh, Yohei ; Hirao, Toshio ; Tamura, Takashi
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Volume :
56
Issue :
4
fYear :
2009
Firstpage :
2056
Lastpage :
2060
Abstract :
A new SEE rate prediction methodology is proposed for power devices. The radiation environment was specified by the averaged LET spectra to take into account the considerably thicker sensitive layer of power devices.
Keywords :
power MOSFET; radiation effects; averaged LET spectra; power MOSFET; power devices; radiation environment; single-event effect rate prediction; Circuit testing; Integrated circuit reliability; Integrated circuit testing; Iron; MOSFET circuits; Power MOSFET; Radiation effects; Rectifiers; Silicon carbide; Voltage; LET spectrum; SEE rate; power MOSFET; radiation effect;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2012708
Filename :
5204608
Link To Document :
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