Title :
3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates
Author :
Munteanu, Daniela ; Autran, Jean-Luc
Author_Institution :
IM2NP, CNRS, Marseille, France
Abstract :
The bipolar amplification and charge collection of Planar Double-Gate MOSFETs and FinFETs with independent gates is investigated. The transient response of independent-gate devices is compared to that of conventional devices having the gates tied together. We show that the bipolar amplification is higher in independent-gate devices than in conventional devices for both positive and negative back gate bias.
Keywords :
MOSFET; bipolar transistors; semiconductor device models; transient response; 3D simulation analysis; FinFET; bipolar amplification; charge collection; independent-gate devices; negative back gate bias; planar double-gate MOSFET; positive back gate bias; transient response; Analytical models; Electrodes; Electrostatics; FinFETs; Fluctuations; MOSFETs; Numerical simulation; Semiconductor device doping; Silicon; Transient response; Bipolar amplification; FinFET; charge collection; double-gate MOSFET; heavy ion; independent gates; single event transient;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2016343
