• DocumentCode
    1299282
  • Title

    Materials and Applications for Solution-Processed Organic Field-Effect Transistors

  • Author

    Sirringhaus, Henning

  • Author_Institution
    Cavendish Lab., Univ. of Cambridge, Cambridge, UK
  • Volume
    97
  • Issue
    9
  • fYear
    2009
  • Firstpage
    1570
  • Lastpage
    1579
  • Abstract
    Organic field-effect transistors (FETs) are presently attracting significant academic research and industrial development interests as they offer performance capabilities comparable to those of thin-film amorphous silicon transistors but at the same time are compatible with low-temperature solution/printing-based manufacturing on flexible plastic substrates. In this paper, we review recent materials advances to improve the field-effect mobility of solution-processed organic semiconductors, discuss recent insight into the physics that determines the electronic structure at the semiconductor-gate dielectric interface in these devices, and provide an overview over some of the near- and medium-term applications.
  • Keywords
    Organic electronics; band structure; interface states; organic field effect transistors; organic semiconductors; semiconductor-insulator boundaries; electronic structure; field-effect mobility; organic field-effect transistors; semiconductor-gate dielectric interface; solution processing; Amorphous silicon; Dielectric substrates; FETs; Manufacturing industries; OFETs; Organic materials; Organic thin film transistors; Plastic films; Plastics industry; Semiconductor thin films; Flexible displays; organic field-effect transistors; printing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2009.2021680
  • Filename
    5204612