DocumentCode :
1299282
Title :
Materials and Applications for Solution-Processed Organic Field-Effect Transistors
Author :
Sirringhaus, Henning
Author_Institution :
Cavendish Lab., Univ. of Cambridge, Cambridge, UK
Volume :
97
Issue :
9
fYear :
2009
Firstpage :
1570
Lastpage :
1579
Abstract :
Organic field-effect transistors (FETs) are presently attracting significant academic research and industrial development interests as they offer performance capabilities comparable to those of thin-film amorphous silicon transistors but at the same time are compatible with low-temperature solution/printing-based manufacturing on flexible plastic substrates. In this paper, we review recent materials advances to improve the field-effect mobility of solution-processed organic semiconductors, discuss recent insight into the physics that determines the electronic structure at the semiconductor-gate dielectric interface in these devices, and provide an overview over some of the near- and medium-term applications.
Keywords :
Organic electronics; band structure; interface states; organic field effect transistors; organic semiconductors; semiconductor-insulator boundaries; electronic structure; field-effect mobility; organic field-effect transistors; semiconductor-gate dielectric interface; solution processing; Amorphous silicon; Dielectric substrates; FETs; Manufacturing industries; OFETs; Organic materials; Organic thin film transistors; Plastic films; Plastics industry; Semiconductor thin films; Flexible displays; organic field-effect transistors; printing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2009.2021680
Filename :
5204612
Link To Document :
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